Competitive Exams: Electronics MCQs (Practice-Test 11 of 13)

  1. Which of the following statements are correct?

    1. Thyristor is current driven device

    2. GTO is current driven device

    3. GTR is current driven device

    4. SCR is a pulse triggered device

    Correct choice is

    1. 1 and 2

    2. 1, 2, 3

    3. All

    4. 4 only

    Answer: c

  2. Which of the following statements are correct?

    1. GTO is a pulse triggered device

    2. MOSFET is uni-polar device

    3. SCR is a bipolar device

    4. Continuous gate signal is not required to maintain the SCR to be in ON state

    Correct choice is

    1. 1, 2, 4 only

    2. 1, 2 only

    3. 4 only

    4. All

    Answer: d

  3. Which of the following is not a fully controlled semiconductor device?

    1. MOSFET

    2. IGBT

    3. IGCT

    4. SCR

    Answer: d

  4. Which of the following is not associated with p-n junction

    1. junction capacitance

    2. charge storage capacitance

    3. depletion capacitance

    4. channel length modulation

    Answer: d

  5. In a p-n junction diode under reverse bias, the magnitude of electric field is maximum at

    1. the edge of the depletion region on the p-side

    2. the edge of the depletion region on the n-side

    3. the p-n junction

    4. the center of the depletion region on the n-side

    Answer: c

  6. An n-channel JFET has IDSS = 2mA, and Vp = -4V. Its transconductance gm = (in mA/V) for an applied gate to source voltage VGS = -2V is

    1. 0.25

    2. 0.5

    3. 0.75

    4. 1

    Answer: b

  7. MOSFET switch in its on-state may be considered equivalent to

    1. resistor

    2. inductor

    3. capacitor

    4. battery

    Answer: c

  8. The effective channel length of a MOSFET in a saturation decreases with increase in

    1. gate voltage

    2. drain voltage

    3. source voltage

    4. body voltage

    Answer: b

  9. The early effect in a bipolar junction transistor is caused by

    1. Fast turn-on

    2. Fast turn-off

    3. Large collector-base reverse bias

    4. Large emmiter-base forward bias

    Answer: c

  10. MOSFET can be used as a

    1. Current controlled capacitor

    2. Voltage controlled capacitor

    3. Current controlled inductor

    4. Voltage controlled inductors

    Answer: b