Competitive Exams: Electronics MCQs (Practice-Test 9 of 13)

  1. Which of the following statements are true about VI characteristic of SCR?

    1. Holding current is more than Latching current

    2. SCR will trigger if the applied voltage exceeds forward break over voltage

    3. SCR can be triggered without gate current

    4. When the SCR is in reverse biased, small leakage current will flow

    Correct choice is:

    1. A, B and C

    2. All are true

    3. B, C, D

    4. C, D

    Answer: c

  2. which of the following statements are true about BJT?

    1. It has more power handling capability than MOSFET

    2. Has higher switching speed than IGBT and MOSFET

    3. Has low on state conduction resistance

    4. Has second breakdown voltage problem

    Correct choice is:

    1. All are true

    2. 1, 2, 3, 4

    3. 1, 3, 4

    4. 2, 3, 4

    Answer: c

  3. For a JFET, when VDS is increased beyond the pinch off voltage, the drain current

    1. Increases

    2. Decreases

    3. Remains constant

    4. First decreases and then increases

    Answer: c

  4. n-channel FETs are superior to P-channel FETs, because

    1. They have higher input impedance

    2. They have high switching time

    3. They consume less power

    4. Mobility of electrons is greater than that of holes

    Answer: d

  5. Which of the following is true about the diodes

    1. During forward biased small amount of voltage drop will appear across anode and cathode

    2. If the reverse voltage exceed VRRM the diode will destroy

    3. trr is depends on softness factor

    4. schottky diodes have low trr

    Correct choice is:

    1. All are true

    2. 1, 2 4

    3. 1, 2, 3

    4. 2, 3, 4

    Answer: c

  6. The MOSFET has

    1. Higher Power handling capability than BJT

    2. Faster switching speed than BJT

    3. High on state resistance

    4. Secondary breakdown voltage problem

    which of the above statements are incorrect?

    Options:

    1. 1, 2, 4

    2. 2, 3

    3. All of the above

    4. 2, 3, 4

    Answer: a

  7. Which of the following is called as uncontrolled semiconductor device?

    1. Diode

    2. Thyristor

    3. GTO

    4. MOSFET

    Answer: a

  8. Which of the following is a half controlled semiconductor device?

    1. MOSFET

    2. GTO

    3. MCT

    4. SCR

    Answer: d

  9. Which of the following abbreviation is not a power semiconductor device?

    1. SIT: Static Induction Transistor

    2. SITH: Static Induction Thyristor

    3. MCT: MOS Controlled Thyristor

    4. IGCT: Integrated Gate Commutated Thyristor

    Options:

    1. 1 and 4

    2. 1 only

    3. 1, 2, 4

    4. All are power semiconductor device

    Answer: d

  10. Which of the following statements are correct?

    1. IGBT is current driven device

    2. IGCT is voltage driven device

    3. MOSFET is voltage driven device

    4. GTO is minority carrier device

    Options:

    1. 1, 2, 3

    2. 2, 3, 4

    3. All are correct

    4. None are correct

    Answer: b