NET, IAS, State-SET (KSET, WBSET, MPSET, etc.), GATE, CUET, Olympiads etc.: Electronics MCQs (Practice_Test 10 of 13)
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- The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called
- avalanche breakdown
- zener breakdown
- breakdown by tunnelling
- high voltage breakdown
- Answer: a
- For a large values of|VDS| , a FET behave as
- Voltage controlled resistor
- Current controlled current source
- Voltage controlled current source
- Current controlled resistor
- Answer: c
- In a full wave rectifier without filter, the ripple factor is
- 0.482
- 1.21
- 1.79
- 2.05
- Answer: a
- Space charge region around a P-N junction
- does not contain mobile carries
- contains both free electrons and holes
- contains one type of mobile carriers depending on the level of doping of the P or N regions
- contains electrons only as free carriers
- Answer: a
- In a JFET, at pinch-off voltage applied on the gate
- The drain current becomes almost zero
- The drain current begins to decrease
- The drain current is almost at saturation value
- The drain to source voltage is close to zero volts
- Answer: c
- The value of ripple factor of a half wave rectifier without filter is approximately
- 1.2
- o. 2
- 2.2
- 2.0
- Answer: a
- In an intrinsic semiconductor, the Fermi-level is
- closer to the valence band
- midway between conduction and valence band
- closer to the conduction band
- within the valence band
- Answer: c
- The transformer utilization factor of a half wave rectifier is approximately
- 0.6
- 0.3
- 0.9
- 1.1
- Answer: b
- Transistor is a
- Current controlled current device
- Current controlled voltage device
- Voltage controlled current device
- Voltage controlled voltage device
- Answer: a
- If the output voltage of a bridge rectifier is 100V, the PIV of diode will be
- 100 ⚹ Square root (2) V
- 200⟋ (pi) V
- 100 ⚹ (pi) V
- V
- Answer: d