NET, IAS, State-SET (KSET, WBSET, MPSET, etc.), GATE, CUET, Olympiads etc.: Electronics MCQs (Practice_Test 9 of 13)
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- Which of the following statements are true about VI characteristic of SCR?
- Holding current is more than Latching current
- SCR will trigger if the applied voltage exceeds forward break over voltage
- SCR can be triggered without gate current
- When the SCR is in reverse biased, small leakage current will flow
- Correct choice is:
- A, B and C
- All are true
- B, C, D
- C, D
- Answer: c
- which of the following statements are true about BJT?
- It has more power handling capability than MOSFET
- Has higher switching speed than IGBT and MOSFET
- Has low on state conduction resistance
- Has second breakdown voltage problem
- Correct choice is:
- All are true
- 1,2, 3,4
- 1,3, 4
- 2,3, 4
- Answer: c
- For a JFET, when VDS is increased beyond the pinch off voltage, the drain current
- Increases
- Decreases
- Remains constant
- First decreases and then increases
- Answer: c
- n-channel FETs are superior to P-channel FETs, because
- They have higher input impedance
- They have high switching time
- They consume less power
- Mobility of electrons is greater than that of holes
- Answer: d
- Which of the following is true about the diodes
- During forward biased small amount of voltage drop will appear across anode and cathode
- If the reverse voltage exceed VRRM the diode will destroy
- trr is depends on softness factor
- schottky diodes have low trr
- Correct choice is:
- All are true
- 1,2 4
- 1,2, 3
- 2,3, 4
- Answer: c
- The MOSFET has
- Higher Power handling capability than BJT
- Faster switching speed than BJT
- High on state resistance
- Secondary breakdown voltage problem
- which of the above statements are incorrect?
- Options:
- 1,2, 4
- 2,3
- All of the above
- 2,3, 4
- Answer: a
- Options:
- Which of the following is called as uncontrolled semiconductor device?
- Diode
- Thyristor
- GTO
- MOSFET
- Answer: a
- Which of the following is a half controlled semiconductor device?
- MOSFET
- GTO
- MCT
- SCR
- Answer: d
- Which of the following abbreviation is not a power semiconductor device?
- SIT: Static Induction Transistor
- SITH: Static Induction Thyristor
- MCT: MOS Controlled Thyristor
- IGCT: Integrated Gate Commutated Thyristor
- Options:
- 1 and 4
- 1 only
- 1,2, 4
- All are power semiconductor device
- Answer: d
- Which of the following statements are correct?
- IGBT is current driven device
- IGCT is voltage driven device
- MOSFET is voltage driven device
- GTO is minority carrier device
- Options:
- 1,2, 3
- 2,3, 4
- All are correct
- None are correct
- Answer: b