Competitive Exams: Electronics MCQs (Practice-Test 11 of 13)

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  1. Which of the following statements are correct?

    1. Thyristor is current driven device

    2. GTO is current driven device

    3. GTR is current driven device

    4. SCR is a pulse triggered device

    Correct choice is

    1. 1 and 2

    2. 1, 2, 3

    3. All

    4. 4 only

    Answer: c

  2. Which of the following statements are correct?

    1. GTO is a pulse triggered device

    2. MOSFET is uni-polar device

    3. SCR is a bipolar device

    4. Continuous gate signal is not required to maintain the SCR to be in ON state

    Correct choice is

    1. 1, 2, 4 only

    2. 1, 2 only

    3. 4 only

    4. All

    Answer: d

  3. Which of the following is not a fully controlled semiconductor device?

    1. MOSFET

    2. IGBT

    3. IGCT

    4. SCR

    Answer: d

  4. Which of the following is not associated with p-n junction

    1. junction capacitance

    2. charge storage capacitance

    3. depletion capacitance

    4. channel length modulation

    Answer: d

  5. In a p-n junction diode under reverse bias, the magnitude of electric field is maximum at

    1. the edge of the depletion region on the p-side

    2. the edge of the depletion region on the n-side

    3. the p-n junction

    4. the center of the depletion region on the n-side

    Answer: c

  6. An n-channel JFET has IDSS = 2mA, and Vp = -4V. Its transconductance gm = (in mA/V) for an applied gate to source voltage VGS = -2V is

    1. 0.25

    2. 0.5

    3. 0.75

    4. 1

    Answer: b

  7. MOSFET switch in its on-state may be considered equivalent to

    1. resistor

    2. inductor

    3. capacitor

    4. battery

    Answer: c

  8. The effective channel length of a MOSFET in a saturation decreases with increase in

    1. gate voltage

    2. drain voltage

    3. source voltage

    4. body voltage

    Answer: b

  9. The early effect in a bipolar junction transistor is caused by

    1. Fast turn-on

    2. Fast turn-off

    3. Large collector-base reverse bias

    4. Large emmiter-base forward bias

    Answer: c

  10. MOSFET can be used as a

    1. Current controlled capacitor

    2. Voltage controlled capacitor

    3. Current controlled inductor

    4. Voltage controlled inductors

    Answer: b